Wiley-VCH Verlag, 2011, 355 pages, ISBN: 978-3-527-41066-8
Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques.
Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.
Fundamentals of Stress and Strain on the Nanoscale
Elastic Strain Relaxation: Thermodynamics and Kinetics
Fundamentals of Stress and Strain at the Nanoscale Level: Toward Nanoelasticity
Onset of Plasticity in Crystalline Nanomaterials
Relaxations on the Nanoscale: An Atomistic View by Numerical Simulations
Model Systems with Stress-Engineered Properties
Accommodation of Lattice Misfit in Semiconductor Heterostructure Nanowires
Strained Silicon Nanodevices
Stress-Driven Nanopatterning in Metallic Systems
Semiconductor Templates for the Fabrication of Nano-Objects
Characterization Techniques of Measuring Stresses on the Nanoscale
Strain Analysis in Transmission Electron Microscopy: How Far Can We Go?
Determination of Elastic Strains Using Electron Backscatter Diffraction in the Scanning Electron Microscope
X-Ray Diffraction Analysis of Elastic Strains at the Nanoscale
Diffuse X-Ray Scattering at Low-Dimensional Structures in the System SiGe/Si
Direct Measurement of Elastic Displacement Modes by Grazing Incidence X-Ray Diffraction
Submicrometer-Scale Characterization of Solar Silicon by Raman Spectroscopy
Strain-Induced Nonlinear Optics in Silicon